Good news for laptop and smartphone buyers: a novel flash-memory design should cut costs and boost capacity.
IBM is trying to advance the supercomputing state of the art in memory, optical links, and processing with research stemming from a massive radio telescope project.
The companies will develop phase-change random access memory, an advance for memory chips that will allow storage of high data volumes, according to the Korea Times.
Big Blue finds a way to double the data that a cell of phase-change memory can store for a long time. It expects the new memory technology in servers in 2016.
Intel and Numonyx announced practical advancements they believe will make phase-change memory meet its performance and capacity promise.
Will flash eventually give way to phase-change random access memory? Samsung is hopeful as it begins manufacturing, but there's still a ways to go.
Although solid-state drives are in vogue, market forces and technical issues are making them a little less appealing than before.
The chipmaker struts its stuff for next-generation networking, processors, energy efficiency, and wireless power transmission at its research day.
Phase change memory could actually make its debut later this year. It's only taken decades to wring out the problems.
Over three decades ago, a Berkeley professor theorized that there should be a circuit that can remember what's happened to it. Now, HP is demonstrating it actually exists.