Intel's new 22-nanometer 3D transistors

Intel today announced what it called a major technical breakthrough and historic innovation in microprocessing, introducing a 3D transistor called Tri-Gate that will result in both performance and power improvements in the 22-nanometer "Ivy Bridge" chips.

Dadi Perlmutter, executive vice president and general manager of Intel's architecture group, holds a silicon wafer produced using the new 22nm 3D manufacturing process.
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3D transistors mean energy savings and improved performance

A fundamental departure from the standard two-dimensional transistor structure, these 3D Tri-Gate transistors enable chips to operate at lower voltage and with less energy leakage. At the 22nm production level, 22-billionths of a meter, there will be a 37 percent performance increase versus Intels' 32nm transistors.
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3D Tri-Gate transistors

Previously, conducting channels moved along a flat plane through the gate, but the 22nm Tri-Gate transistor forms conducting channels on three sides of a vertical fin.
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3D Tri-Gate transistors

An extreme close-up of 3D Intel's new Tri-Gate transistors shows the honeycomb like structure.
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Intel's continuation of Moore's Law

Intel says that ultimately the new 3D transistors will allow the company to continue on the path of Moore's Law, making future devices faster and more energy efficient.
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Intel Executive VP Dadi Perlmutter

Intel Executive VP Dadi Perlmutter shows off a laptop used to prototype the capabilities of the new 3D transistors.
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Dadi Perlmutter, Mark Bohr, and Bill Holt

Intel Executive VP Dadi Perlmutter, left, Senior Fellow Mark Bohr, and Senior VP Bill Holt take questions following the unveiling of Intel's new 3D transistor structure Wednesday in San Francisco.
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Showing off Intel's new transistors

Hardware used internally to test Intel's new 3D transistor structure shows off the capabilities of the next-generation chips.
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