Intel today announced what it called a major technical breakthrough and historic innovation in microprocessing, introducing a 3D transistor called Tri-Gate that will result in both performance and power improvements in the 22-nanometer "Ivy Bridge" chips.
Dadi Perlmutter, executive vice president and general manager of Intel's architecture group, holds a silicon wafer produced using the new 22nm 3D manufacturing process.
3D transistors mean energy savings and improved performance
A fundamental departure from the standard two-dimensional transistor structure, these 3D Tri-Gate transistors enable chips to operate at lower voltage and with less energy leakage. At the 22nm production level, 22-billionths of a meter, there will be a 37 percent performance increase versus Intels' 32nm transistors.